SMBTA42/MMBTA42
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
2
3
• Complementary types:
1
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
SMBTA42/MMBTA42
Marking
s1D
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
300
Collector-base voltage
VCBO
300
Emitter-base voltage
VEBO
6
Collector current
IC
500
Base current
IB
100
Total power dissipation-
Ptot
360
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
Unit
V
mA
TS ≤ 74 °C
-65 ... 150
Value
≤ 210
Unit
K/W
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-12-19
SMBTA42/MMBTA42
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 300
Unit
V
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
300
-
-
V(BR)EBO
6
-
-
IC = 100 µA, IE = 0
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 200 V, IE = 0
-
-
0.1
VCB = 200 V, IE = 0 , TA = 150 °C
-
-
20
-
-
100
Emitter-base cutoff current
IEBO
nA
VEB = 5 V, IC = 0
DC current gain1)
-
hFE
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
IC = 30 mA, VCE = 10 V
40
-
-
VCEsat
-
-
0.5
VBEsat
-
-
0.9
50
70
-
MHz
-
-
3
pF
Collector-emitter saturation voltage1)
V
IC = 20 mA, IB = 2 mA
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
AC Characteristics
Transition frequency
fT
IC = 10 MHz, VCE = 20 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 20 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
2
2011-12-19
SMBTA42/MMBTA42
DC current gain hFE = ƒ(IC)
VCE = 10 V
10 3
Operating range IC = ƒ(VCEO)
TA = 25°C, D = 0
SMBTA 42/43
10 3
EHP00844
mA
5
10 µs
h FE
10
IC
10 2
2
100 µs
5
10 1
1 ms
DC
10
1
10 0
5
10 0
-1
10
5 10
0
5 10
1
5 10
2
mA 10
10 -1 0
10
3
10
1
10
2
V
Collector cutoff current ICBO = ƒ(TA)
VCBO = 160 V
VCE = 10V
10 3
SMBTA 42/43
EHP00843
10 4
nA
mA
SMBTA 42/43
EHP00842
ΙC
10
3
VCE
ΙC
Collector current IC = ƒ(VBE )
10
Ι CBO
2
max
10 3
5
5
10 2
5
10 1
5
typ
10 1
5
10 0
10 0
5
5
10 -1
10 -1
0
0.5
V
1.0
1.5
0
V BE
50
C 150
100
TA
3
2011-12-19
SMBTA42/MMBTA42
Transition frequency fT = ƒ(IC)
VCE = 10 V, f = 100 MHz
10 3
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
SMBTA 42/43
EHP00839
90
pF
MHz
CCB(CEB )
fT
70
60
50
10 2
40
CEB
5
30
20
10
CCB
10
1
10 0
5
10 1
5
10 2 mA 5
0
0
10 3
4
8
12
16
22
VCB(VEB
ΙC
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
400
mW
K/W
320
10 2
RthJS
280
Ptot
V
240
10 1
200
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
160
120
10 0
80
40
0
0
15
30
45
60
75
90 105 120
°C
TS
10 -1 -6
10
150
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
2011-12-19
SMBTA42/MMBTA42
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 3
SMBTA 42/43
Ptot max
5
Ptot DC
EHP00840
tp
D=
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2011-12-19
Package SOT23
SMBTA42/MMBTA42
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2011-12-19
SMBTA42/MMBTA42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
7
2011-12-19
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